FDS8960C Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS8960C Key Features
- Q1: N-Channel RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V
- Q2: P-Channel RDS(on) = 0.053Ω @ VGS = -10V RDS(on) = 0.087Ω @ VGS = -4.5V Fast switching speed RoHS pliant 7.0A, 35V
- 5A, -35V