FDS8960C Datasheet | Fairchild Semiconductor

Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. - - Features - Q1: N-Channel RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V - Q2: P-Channel RDS(on) = 0.053Ω @ VGS = - 10V RDS(on) = 0.087Ω @ VGS = - 4.5V Fast switching speed Ro HS pliant 7.0A, 35V - 5A, - 35V D1 D D1 D DD2 D2 D 5 6 7 Q2 4 3 Q1 2 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 (Note 1a) Q2 - 35 ±25 - 5 - 20 2 1.6 1 0.9 - 55 to +150 Units - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 7...