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FDS8962C - Dual N & P-Channel PowerTrench MOSFET

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Features

  • Q1: N-Channel 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V.
  • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V.
  • Fast switching speed.
  • High power and handling capability in a widely used surface mount package General.

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www.DataSheet4U.com FDS8962C Dual N & P-Channel PowerTrench® MOSFET June 2006 FDS8962C Dual N & P-Channel PowerTrench® MOSFET Features ■ Q1: N-Channel 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V ■ Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V ■ Fast switching speed ■ High power and handling capability in a widely used surface mount package General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
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