FDW2601NZ Datasheet | Fairchild Semiconductor

FDW2601NZ Dual N-Channel 2.5V Specified Power Trench® MOSFET c May 2008 FDW2601NZ Dual N-Channel 2.5V Specified Power Trench® MOSFET tm M Features ! 8.2A, 30V r DS(ON) = 0.015Ω, VGS = 4.5V r DS(ON) = 0.020Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5k V Typical (note 3) ! High performance trench technology for extremely low r DS(ON) ! Low profile TSSOP-8 package Applications ! Load switch ! Battery charge ! Battery disconnect circuits General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. G2 S2 S2 D2 TSSOP-8 Pin 1 G1 S1 S1 D1 D1 D2 G1 G2 S1 S2 ©2008 Fairchild Semiconductor Corporation FDW2601NZ Rev. A1 .fairchildsemi. FDW2601NZ Dual N-Channel 2.5V Specified Power Trench®...