FDW264P Datasheet | Fairchild Semiconductor

November 2003 P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features - - 9.7 A, - 20 V. RDS(ON) = 10.0 mΩ @ VGS = - 4.5 V RDS(ON) = 14.5 mΩ @ VGS = - 2.5 V - Extended VGSS range (±12V) for battery applications - - Low gate charge High performance trench technology for extremely low RDS(ON) - Low profile TSSOP-8 package Applications - - - - Load switch Motor drive DC/DC conversion Power management D S S D G S S D Pin 1 5 6 7 8 4 3 2...