FDW262P Description
This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDW262P Key Features
- 4.5 A, -20 V. RDS(ON) = 47 mΩ @ VGS = -4.5 V RDS(ON) = 65 mΩ @ VGS = -2.5 V RDS(ON) = 100 mΩ @ VGS = -1.8 V
- RDS(ON) rated for use with 1.8 V logic
- Low gate charge (13nC typical)
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package