Description
This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 4.5 A,.
- 20 V. RDS(ON) = 47 mΩ @ VGS =.
- 4.5 V RDS(ON) = 65 mΩ @ VGS =.
- 2.5 V RDS(ON) = 100 mΩ @ VGS =.
- 1.8 V.
- RDS(ON) rated for use with 1.8 V logic.
- Low gate charge (13nC typical).
- High performance trench technology for extremely low RDS(ON).
- Low profile TSSOP-8 package.
FDW262P Datasheet
