FDW262P
FDW262P is 20V P-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor.
June 2001
20V P-Channel Power Trench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- - 4.5 A,
- 20 V. RDS(ON) = 47 mΩ @ VGS =
- 4.5 V RDS(ON) = 65 mΩ @ VGS =
- 2.5 V RDS(ON) = 100 mΩ @ VGS =
- 1.8 V
- RDS(ON) rated for use with 1.8 V logic
- Low gate charge (13n C typical)
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
Applications
- Power management
- Load switch
D S S D G S S D
5 6 7 8
4 3 2 1
TSSOP-8
Pin...
