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FDZ371PZ Datasheet Thin Wl-csp MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET July 2009 FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on).

This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).

Applications „ Battery management „ Load switch „ Battery protection Pin 1 S D G S Pin 1 BOTTOM WL-CSP 1.0X1.0 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3.7 -12 1.7 0.5 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 75 260 °C/W Package Marking and Ordering Information Device Marking K Device FDZ371PZ Package WL-CSP 1.0X1.0 Thin Reel Size 7” Tape Width 8 mm Quantity 5000 units ..

Key Features

  • Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A.
  • Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A.
  • Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A.
  • Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A.
  • Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2 x 2 BGA.
  • Ultra-thin package: less than 0.4 mm height when mounted to PCB.
  • HBM ESD protection level >4.4kV typical (Note 3).
  • RoHS Compliant ® tm General Descr.

More Datasheets from Fairchild (now onsemi)

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FDZ371PZ Distributor