FDZ372NZ Datasheet | Fairchild Semiconductor

FDZ372NZ N-Channel 1.5 V Specified Power Trench® Thin WL-CSP MOSFET March 2010 N-Channel 1.5 V Specified Power Trench® Thin WL-CSP MOSFET 20 V, 4.7 A, 50 mΩ Features General Description - Max r DS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A - Max r DS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A - Max r DS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A - Max r DS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A - Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2x2 BGA - Ultra-thin package: less than 0.4 mm height when mounted to PCB - HBM ESD protection level > 3200V (Note3) - Ro HS pliant Designed on Fairchild's advanced 1.5 V Power Trench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ372NZ minimizes both PCB space and r DS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r DS(on). Applications - Battery management - Load switch - Battery protection Pin 1 S DS Pin 1 BOTTOM WL-CSP 1.0X1.0 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source...