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FDZ372NZ - N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET

General Description

Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A

Occupies only 1.0 mm2 of PCB area.

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET March 2010 FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 4.7 A, 50 mΩ Features General Description „ Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A „ Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A „ Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A „ Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A „ Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2x2 BGA „ Ultra-thin package: less than 0.4 mm height when mounted to PCB „ HBM ESD protection level > 3200V (Note3) „ RoHS Compliant Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ372NZ minimizes both PCB space and rDS(on).