FDZ391P Datasheet | Fairchild Semiconductor

FDZ391P P-Channel 1.5V Power Trench® WL-CSP MOSFET September 2008 FDZ391P P-Channel 1.5 V Power Trench® Thin WL-CSP MOSFET -20 V, -3 A, 85 mΩ Features General Description - Max r DS(on) = 85 mΩ at VGS = -4.5 V, ID = -1 A - Max r DS(on) = 123 mΩ at VGS = -2.5 V, ID = -1 A - Max r DS(on) = 200 mΩ at VGS = -1.5 V, ID = -1 A - Occupies only 1.5 mm2 of PCB area - Ultra-thin package: less than 0.4 mm height when mounted to PCB - Ro HS pliant tm Designed on Fairchild's advanced 1.5 V Power Trench process with state of the art "low pitch" Thin WLCSP packaging process, the FDZ391P minimizes both PCB space and r DS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r DS(on). Applications - Battery management - Load switch - Battery protection Pin 1 S S D D S G BOTTOM MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings -20 ±8 -3 -15 1.9 0.9 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 133 °C/W Package Marking and Ordering Information Device Marking 6 Device FDZ391P Package WL-CSP Thin Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units .. ©2008 Fairchild Semiconductor Corporation FDZ391P Rev.B .fairchildsemi. FDZ391P P-Channel 1.5V Power Trench® WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise...