Datasheet Details
| Part number | FDZ3N513ZT |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 380.06 KB |
| Description | 30V Integrated NMOS And Schottky Diode |
| Datasheet | FDZ3N513ZT_FairchildSemiconductor.pdf |
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Overview: DataSheet.in FDZ3N513ZT Integrated NMOS and Schottky Diode July 2010 FDZ3N513ZT Integrated NMOS and Schottky.
| Part number | FDZ3N513ZT |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 380.06 KB |
| Description | 30V Integrated NMOS And Schottky Diode |
| Datasheet | FDZ3N513ZT_FairchildSemiconductor.pdf |
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The FDZ3N513ZT is a monolithic NMOS/ Schottky bination (FETky) and is designed and wired to function as a discontinuous conduction mode (DCM) boost LED power train for mobile LED backlighting applications.
Application Boost Converter Power Train for single cell Li-ion LED backlighting D S G K Pin 1 WL-CSP 3D Bumps Facing Up View WL-CSP 3D Bumps Facing Down View WL-CSP 1.0X1.0 Bumps Facing Up View Absolute Maximum Ratings Symbol VDS VGS PD ID VRRM IO TJ, TSTG ESD NMOS Drain to Source Voltage NMOS Gate to Source Voltage Power Dissipation @ TA = 25°C Maximum Continuous NMOS Drain Current Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating Junction and Storage Temperature Electrostatic Discharge Protection CDM (Note 1a) (Note 1a) Parameter Ratings 30 -0.3/5.5 1 1.1 25 0.3 -55/125 2000 Units V V W A V A °C V Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient - 1in2, 2oz.
Copper Thermal Resistance, Junction to Ambient - Minimum Pad (Note 1a) (Note 1b) 100 260 °C/W °C/W Package Marking and Ordering Information Part Number FDZ3N513ZT Device Marking Z3 Package WL-CSP 1.0X1.0 Reel Size 7” Tape Width 8mm Quantity 5000 units ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev.
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