FDZ375P Datasheet | Fairchild Semiconductor

FDZ375P P-Channel 1.5 V Specified Power Trench® Thin WL-CSP MOSFET April 2010 P-Channel 1.5 V Specified Power Trench® Thin WL-CSP MOSFET -20 V, -3.7 A, 78 mΩ Features General Description Designed on Fairchild's advanced 1.5 V Power Trench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ375P minimizes both PCB space and r DS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r DS(on). - Max r DS(on) = 78 mΩ at VGS = -4.5 V, ID = -2.0 A - Max r DS(on) = 92 mΩ at VGS = -2.5 V, ID = -1.5 A - Max r DS(on) = 112 mΩ at VGS = -1.8 V, ID = -1.0 A - Max r DS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A - Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2 x 2 BGA - Ultra-thin package: less than 0.4 mm height when mounted to PCB - Ro HS pliant Applications - Battery management - Load switch - Battery protection Pin 1 S D G S Pin 1 BOTTOM WL-CSP 1.0X1.0 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3.7 -12 1.7 0.5 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 75 260 °C/W Package Marking and Ordering Information Device Marking N Device FDZ375P Package WL-CSP 1.0X1.0 Thin Reel Size 7” Tape Width 8 mm Quantity 5000 units ©2010 Fairchild Semiconductor Corporation FDZ375P Rev.C .fairchildsemi. http://.. FDZ375P P-Channel 1.5 V Specified Power Trench® Thin WL-CSP...