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FDZ375P - P-Channel 1.5V Specified PowerTrench Thin WL-CSP MOSFET

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ375P minimizes both PCB space and rDS(on).

Key Features

  • General.

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FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET April 2010 FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.7 A, 78 mΩ Features General Description Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ375P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). „ Max rDS(on) = 78 mΩ at VGS = -4.5 V, ID = -2.0 A „ Max rDS(on) = 92 mΩ at VGS = -2.5 V, ID = -1.5 A „ Max rDS(on) = 112 mΩ at VGS = -1.8 V, ID = -1.0 A „ Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.