Description
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.
Features
- As a remote variable resistor.
- ≤ 100Ω to ≥ 300 MΩ.
- ≥ 99.9% linearity.
- ≤ 15 pF shunt capacitance.
- ≥ 100 GΩ I/O isolation resistance As an analog switch.
- Extremely low offset voltage.
- 60 Vpk-pk signal capability.
- No charge injection or latch-up.
- ton, toff ≤ 15 µS.
- UL recognized (File #E90700).
- VDE recognized (File #E94766).
- Ordering option ‘300’ (e. g. H11F1.300).
H11F2 Datasheet
