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H11F2 - PHOTO FET OPTOCOUPLERS

General Description

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.

Key Features

  • As a remote variable resistor.
  • ≤ 100Ω to ≥ 300 MΩ.
  • ≥ 99.9% linearity.
  • ≤ 15 pF shunt capacitance.
  • ≥ 100 GΩ I/O isolation resistance As an analog switch.
  • Extremely low offset voltage.
  • 60 Vpk-pk signal capability.
  • No charge injection or latch-up.
  • ton, toff ≤ 15 µS.
  • UL recognized (File #E90700).
  • VDE recognized (File #E94766).
  • Ordering option ‘300’ (e. g. H11F1.300).

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
H11F1 PHOTO FET OPTOCOUPLERS
H11F3 PHOTO FET OPTOCOUPLERS
H11A1 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A2 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A3 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM. 6 1 6 CATHODE 2 5 1 3 4 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. FEATURES As a remote variable resistor • ≤ 100Ω to ≥ 300 MΩ • ≥ 99.