Datasheet Summary
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
PACKAGE SCHEMATIC
ANODE 1
OUTPUT TERM.
6 1
CATHODE 2 5
3 4 OUTPUT TERM.
6 1
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
Features
As a remote variable resistor
- ≤ 100Ω to ≥ 300 MΩ
- ≥ 99.9% linearity
- ≤ 15 pF shunt capacitance
- ≥ 100 GΩ I/O isolation resistance As an analog switch
- Extremely low offset...
