H11F3 Description
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
H11F3 Key Features
- Extremely low offset voltage
- 60 Vpk-pk signal capability
- No charge injection or latch-up
- ton, toff ≤ 15 µS
- UL recognized (File #E90700)
- VDE recognized (File #E94766)