ISL9N322AD3ST Datasheet | Fairchild Semiconductor

Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features - Fast switching - r DS(ON) = 0.018Ω (Typ), VGS = 10V - r DS(ON) = 0.028Ω (Typ), VGS = 4.5V - Qg (Typ) = 9n C, VGS = 5V - Qgd (Typ) =3n C - CISS (Typ) =970p F Applications - DC/DC converters DRAIN (FLANGE) GATE SOURCE TO-252 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) Continuous (TC = 100o C, VGS = 4.5V) Continuous (TC = 25o C, VGS = 10V, RθJA=52o C) Pulsed Power dissipation Derate above 25o C Operating and Storage Temperature Ratings 30 ±20 20 20 8 Figure 4 50 0.33 -55 to 175 Units V V A A A A W W/o C o C PD TJ, TSTG Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 3 100 52 o C/W o C/W o C/W Package Marking and Ordering Information Device Marking N322AD Device ISL9N322AD3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units ©2002 Fairchild Semiconductor Corporation Rev.B, January 2002 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V TC = 150o VGS = ±20V 30 1 250 ±100 V µA n A On Characteristics VGS(TH) r DS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 20A, VGS = 10V ID = 18A, VGS = 4.5V 1 0.018 0.028 3 0.022 0.033 V Ω Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(5)...