ISL9N322AS3ST Datasheet | Fairchild Semiconductor

Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features - Fast switching - r DS(ON) = 0.018Ω (Typ), VGS = 10V - r DS(ON) = 0.028Ω (Typ), VGS = 4.5V - Qg (Typ) = 9n C, VGS = 5V - Qgd (Typ) = 3n C - CISS (Typ) = 970p F Applications - DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE D GATE SOURCE DRAIN (FLANGE) TO-263AB Symbol VDSS VGS TO-220AB Ratings 30 ±20 35 20 9 Figure 4 50 0.33 -55 to 175 Units V V A A A A W W/o C o C MOSFET Maximum Ratings TA = 25°C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) Continuous (TC = 100o C, VGS = 4.5V) Continuous (TC = 25o C, VGS = 10V, RθJA = 43o C/W) Pulsed Power dissipation Derate above 25o C Operating and Storage Temperature PD TJ, TSTG Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 3 62 43 o C/W o C/W o C/W Package Marking and Ordering Information Device Marking N322AS N322AP Device ISL9N322AS3ST ISL9N322AP3 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units ©2002 Fairchild Semiconductor Corporation Rev. B, January 2002 ISL9N322AP3/ISL9N322AS3ST Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V TC = 150o VGS = ±20V 30 1 250 ±100 V µA n A On Characteristics VGS(TH) r DS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID...