ISL9N327AD3ST Datasheet | Fairchild Semiconductor

escription This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features - Fast switching - r DS(ON) = 0.023Ω (Typ), VGS = 10V - r DS(ON) = 0.033Ω (Typ), VGS = 4.5V - Qg (Typ) = 8.7n C, VGS = 5V - Qgd (Typ) =3.2n C - CISS (Typ) =910p F Applications - DC/DC converters DRAIN (FLANGE) GATE SOURCE TO-252 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 100o C, VGS = 4.5V) Continuous (TC = 25o C, VGS = 10V, RθJA= 52o C/W) Pulsed PD TJ, TSTG Power dissipation Derate above Operating and Storage Temperature 20 17 7 Figure 4 50 0.33 -55 to 175 W W/o C o Ratings 30 ±20 Units V V A A A Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case , TO-252 Thermal Resistance Junction to Ambient , TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 3 100 52 o C/W C/W o C/W o Package Marking and Ordering Information Device Marking N327AD Device ISL9N327AD3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units ©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V VGS = ±20V TC = 150o 30 1 250 ±100 V µA n A On Characteristics VGS(TH) r DS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 20A, VGS = 10V ID = 17A, VGS = 4.5V 1 0.023 0.033 3 0.027 0.040 V...