ISL9N7030BLP3 Datasheet | Fairchild Semiconductor

features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. PWM Optimized Features - - - - - - Fast Switching r DS(ON) = 0.0064Ω (Typ), VGS = 10V r DS(ON) = 0.010Ω (Typ), VGS = 4.5V Qg Total 24n C (Typ), VGS = 5V Qgd (Typ) - - - - - - . . . . 11n C CISS (Typ) - - - - - - . 2600p F Packaging ISL9N7030BLS3ST JEDEC TO-263AB DRAIN (FLANGE) ISL9N7030BLP3 JEDEC TO-220AB SOURCE DRAIN GATE Symbol G GATE SOURCE DRAIN (FLANGE) Ordering Information PART NUMBER ISL9N7030BLP3 ISL9N7030BLS3ST PACKAGE TO-220AB TO-263AB (Tape and Reel) BRAND 7030BL 7030BL Absolute Maximum Ratings SYMBOL VDSS VDGR VGS ID ID ID IDM PD TJ, TSTG TL Tpkg RθJC RθJA RθJA NOTE: 1. TJ = 25o C to 150o C. TC = 25o C, Unless Otherwise Specified PARAMETER ISL9N7030BLP3, ISL9N7030BLS3ST 30 30 ±20 75 48 15 Figure 4 100 0.67 -55 to 175 300 260 1.5 62 43 UNITS V V V A A A A W W/o C o C o C o C o C/W o C/W o C/W Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20kΩ) (Note 1) Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Figure 2) Continuous (TC = 100o C, VGS = 4.5V) (Figure 2) Continuous (TC = 25o C, VGS = 10V, RθJA = 43o C/W) Pulsed Drain Current Power Dissipation Derate Above 25o C Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Thermal Resistance Junction to Case, TO-220, TO-263 Thermal Resistance Junction to Ambient, TO-220, TO-263 Thermal Resistance Junction to Ambient, TO-263, 1in 2 copper pad area THERMAL SPECIFICATIONS CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above...