MOC217-M Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through the board mounting.
MOC217-M Key Features
- UL Recognized (File #E90700, Volume 2)
- VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)
- Convenient Plastic SOIC-8 Surface Mountable Package Style
- Low LED Input Current Required, for Easier Logic Interfacing
- Standard SOIC-8 Footprint, with 0.050” Lead Spacing
- patible with Dual Wave, Vapor Phase and IR Reflow Soldering
- High Input-Output Isolation of 2500 Vac (rms) Guaranteed