Datasheet4U Logo Datasheet4U.com

NDS0605 - P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching.

Key Features

  • 0.18A,.
  • 60V. RDS(ON) = 5 Ω @ VGS =.
  • 10 V.
  • Voltage controlled p-channel small signal switch.
  • High density cell design for low RDS(ON).
  • High saturation current DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NDS0610 P-Channel Enhancement Mode Field Effect Transistor ON Semiconductor
NDS02ZG-M6 NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs Power-One
NDS03ZA NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs Power-One
NDS03ZA-M6 NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs Power-One
NDS03ZB-M6 NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs Power-One

Other Datasheets by Fairchild (now onsemi)

Part Number Description
NDS0610 P-Channel Enhancement Mode Field Effect Transistor
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NDS0605 July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features • −0.18A, −60V.