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NDS9925A - Dual N-Channel MOSFET

General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • 4.5 A, 20 V. RDS(ON) = 0.060 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 S ND 5A 2 99 S2 G2 5 6 7 8 4 3 2 1 SO-8 pin 1 S1 G1 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDS9925A Units VDSS VGSS ID Drain-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 4.5 A, 20 V. RDS(ON) = 0.060 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON).