FDB0165N807L Description
Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and...
FDB0165N807L Key Features
- Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant