FDB86102LZ Description
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd pared to peting trench technologies Fast switching speed 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state...
FDB86102LZ Key Features
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A
- Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A
- HBM ESD protection level > 6 kV typical (Note 4)
- Very low Qg and Qgd pared to peting trench
- Fast switching speed
- 100% UIL Tested
- RoHS pliant