FDB86135 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDB86135 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant