FDC6020C Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDC6020C Key Features
- Q1 -4.2 A, -20V. RDS(ON) = 55 mΩ @ VGS =
- 4.5 V RDS(ON) = 82 mΩ @ VGS =