FDC6308P Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
FDC6308P Key Features
- 1.7 A, -18 V. RDS(ON) = 0.18 Ω @ VGS = -4.5 V RDS(ON) = 0.30 Ω @ VGS = -2.5 V
FDC6308P Applications
- 12V). These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 an