FDC699P Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Applications Battery management Load Switch Battery protection.
FDC699P Key Features
- 7 A, -20 V
- High performance trench technology for extremely low RDS(ON)
- Fast switching speed
- FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size