FDFME2P823ZT Description
0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Schottky: VF < 0.57 V @ 1A Free from halogenated pounds and antimony oxides HBM ESD protection level > 1600 V (Note 3) RoHS pliant This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions.
FDFME2P823ZT Key Features
- Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
- Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
- Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
- Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
- Low profile: 0.55 mm maximum in the new package
- Schottky: VF < 0.57 V @ 1A
- Free from halogenated pounds and antimony oxides
- HBM ESD protection level > 1600 V (Note 3)
- RoHS pliant