FDG6318P Description
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
FDG6318P Key Features
- 0.5 A, -20 V. RDS(ON) = 780 mΩ @ VGS = -4.5 V RDS(ON) = 1200 mΩ @ VGS = -2.5 V
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V)
- pact industry standard SC70-6 surface mount package