FDM606P Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
FDM606P Key Features
- Fast switching
- rDS(ON) = 0.026Ω (Typ), VGS = -4.5V
- rDS(ON) = 0.033Ω (Typ), VGS = -2.5V
- rDS(ON) = 0.052Ω (Typ), VGS = -1.8V