FDMC86240 Description
Shielded Gate MOSFET Technology Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain...
FDMC86240 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
- Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- RoHS pliant
- DC Conversion
- 55 to +150