FDME410NZT Description
0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated pounds and antimony oxides HBM ESD protection level > 1800V (Note3) RoHS pliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
FDME410NZT Key Features
- Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A
- Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A
- Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A
- Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A
- Low profile: 0.55 mm maximum in the new package
- Free from halogenated pounds and antimony oxides
- HBM ESD protection level > 1800V (Note3)
- RoHS pliant