FDME430NT Description
Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated pounds and antimony oxides RoHS pliant This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS =...
FDME430NT Key Features
- Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A
- Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A
- Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A
- Low profile: 0.55 mm maximum in the new package
- Free from halogenated pounds and antimony oxides
- RoHS pliant