FDME910PZT Description
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.
FDME910PZT Key Features
- Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
- Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
- Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
- Low profile: 0.55 mm maximum in the new package MicroFET
- HBM ESD protection level > 2 kV typical (Note 3)
- Free from halogenated pounds and antimony oxides
- RoHS pliant