FDMS86202 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application DC-DC Conversion RoHS pliant Top Pin 1 Bottom S Pin 1 S S G S S D D D D D D SD GD Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol...
FDMS86202 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A
- Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- DC-DC Conversion
- RoHS pliant