FDP8N50NZU Description
This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS technology. This advance t echnology ha s been especially t ailored to minimize on-st ate r esistance, provide super ior switchin g performance, and withst and high energy pulse in the avalanch e and mutation mode. The se devices are well suit ed for hig h efficient switching mode pow er...
FDP8N50NZU Key Features
- RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A
- Low Gate Charge ( Typ. 14nC)
- Low Crss ( Typ. 5pF)
- Fast Switching
- 100% Avalanche Tested
- Improve dv/dt Capability
- ESD Improved Capability
- RoHS pliant
- Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed