FDS6815 Description
These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process. It has been optimized for power management applications which require a wide range of gate drive voltages.
FDS6815 Key Features
- 5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V Extended VGSS range ( ±12V) for battery
FDS6815 Applications
- 5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V Extended VGSS range ( ±12V) for battery applications. Low gate charge. Fast switc