FDS9953A Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
FDS9953A Key Features
- 2.9 A, -30 V RDS(ON) = 130 mΩ @ V GS = -10 V RDS(ON) = 200 mΩ @ V GS = -4.5 V
- Low gate charge (2.5nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability