H11A817 Overview
Key Specifications
Package: DIP
Mount Type: Through Hole
Pins: 4
Height: 5.59 mm
Description
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
Key Features
- Compact 4-pin package