IRF530
Key Features
- rDS(ON) = 0.160Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- Part: IRF530
- Description: N-Channel Power MOSFET
- Category: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 70.67 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF530FI | STMicroelectronics | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| IRF530L | International Rectifier | Power MOSFET |
| IRF530N | NXP Semiconductors | N-channel TrenchMOS transistor |
| IRF530 | Harris Corporation | N-Channel MOSFET |
| IRF533 | Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF532R | Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF530NS | Inchange Semiconductor | N-Channel MOSFET |
| IRF530NL | Inchange Semiconductor | N-Channel MOSFET |
| IRF530FP | STMicroelectronics | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| IRF532 | Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |