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FPD6836SOT343 - HIGH LINEARITY PACKAGED PHEMT

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Part number FPD6836SOT343
Manufacturer Filtronic
File Size 215.98 KB
Description HIGH LINEARITY PACKAGED PHEMT
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AND APPLICATIONS The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography.The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.The FPD6836 is available in die form and in other p

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