MMBTA94 - PNP EPITAXIAL PLANAR TRANSISTOR

Description

The MMBTA94 is designed for application that requires high voltage.

Features

High Breakdown Voltage: VCEO=400(Min. ) at IC=1mA.

First Silicon

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Datasheet Details

Part number	MMBTA94
Manufacturer	First Silicon
File Size	111.78 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	MMBTA94 Datasheet
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SEMICONDUCTOR TECHNICAL DATA MMBTA94 PNP EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. Description 3 2 1 The MMBTA94 is designed for application that requires high voltage. SOT–23 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA COLLECTOR 3 DEVICE MARKING 1 BASE MMBTA94 = 4Z Absolute Maximum Ratings 2 EMITTER • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ..........................................................................

Published: Jul 30, 2017 |