| Part number | MRF5P20180HR6 |
|---|---|
| Datasheet | MRF5P20180HR6_FreescaleSemiconductor.pdf |
| File Size | 389.68 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistor |
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Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF5P21045NR1 | RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5S19060MBR1 | RF Power Field Effect Transistors |
| MRF5S19060MR1 | RF Power Field Effect Transistors |
| MRF5S19060NBR1 | RF Power Field Effect Transistors |
| MRF5S19060NR1 | RF Power Field Effect Transistors |
| MRF5S19090HR3 | RF Power Field Effect Transistors |
| MRF5S19090HSR3 | RF Power Field Effect Transistors |
| MRF5S19130HR3 | RF Power Field Effect Transistors |
| MRF5S19130HSR3 | RF Power Field Effect Transistors |
| MRF5S19150HR3 | RF Power Field Effect Transistors |
