MRF5P20180HR6 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. - Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 800 m A, Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 d B @ 0.01% Probability on CCDF. Power Gain - 14 d B Drain Efficiency - 26% IM3 @ 10 MHz Offset - - 37.5 d Bc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset - - 41 d Bc @ 3.84 MHz Channel Bandwidth - Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched, Controlled Q, for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Lower Thermal Resistance Package - Low Gold Plating Thickness on Leads, 40µ″ Nominal. - In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 1990 MHz, 38 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings .. Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +65 - 0.5, +15 530 3.0 - 65 to +150 200...