MRF5P21045NR1 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - 200°C Capable Plastic Package - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. - 2170 MHz, 10 W AVG., 28 V 2 x W - CDMA, DUAL PATH LATERAL N - CHANNEL RF POWER MOSFET CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 RFin A/VGSA 3 2 RFout A/VDSA .. RFin B/VGSB 4 1 RFout B/VDSB (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +65 - 0.5, + 15 - 65 to +150 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 45 W CW Case Temperature 77°C, 10 W CW Symbol RθJC Value (1,2) 1.35 1.48 Unit °C/W 1. MTTF calculator available at http://.freescale./rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRF5P21045NR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per...