FMV19N60E - N-CHANNEL SILICON POWER MOSFET

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Op

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-.

Fuji Electric

📥 Download Datasheet

Datasheet Details

Part number	FMV19N60E
Manufacturer	Fuji Electric
File Size	575.61 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMV19N60E Datasheet

📁 Similar Datasheet

FMV11N60E - N-Channel MOSFET (INCHANGE)
FMV12N50E - N-Channel MOSFET (INCHANGE)
FMV-3FU - Damper Diode (Sanken electric)
FMV-3GU - Damper Diode (Sanken electric)
FMV-G5FS - Damper Diodes (Sanken electric)
FMV09N70E - N-Channel MOSFET (INCHANGE)
FMV20N60S1 - N-Channel MOSFET (INCHANGE)
FMV60N190S2HF - N-Channel MOSFET (INCHANGE)
FMVC48 - VCXO (Frequency Management)

Other Datasheets by Fuji Electric

FMV19N60ES - N-CHANNEL SILICON POWER MOSFET
FMV10N60E - N-CHANNEL SILICON POWER MOSFET
FMV10N80E - N-CHANNEL SILICON POWER MOSFET
FMV11N60E - N-CHANNEL SILICON POWER MOSFET
FMV11N90E - N-CHANNEL SILICON POWER MOSFET
FMV12N50E - N-CHANNEL SILICON POWER MOSFET
FMV12N50ES - N-CHANNEL SILICON POWER MOSFET
FMV12N60ES - N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription

Click to expand full text

www.DataSheet.co.kr FMV19N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.

Published: Mar 7, 2012 |