• Part: MBM29BS12DH
  • Description: BURST MODE FLASH MEMORY
  • Manufacturer: Fujitsu Semiconductor Limited
  • Size: 1.12 MB
Download MBM29BS12DH Datasheet PDF
Fujitsu Semiconductor Limited
MBM29BS12DH
MBM29BS12DH is BURST MODE FLASH MEMORY manufactured by Fujitsu Semiconductor Limited.
- Part of the MBM29FS12DH comparator family.
DESCRIPTION The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Handshaking On/Off Max Latency (even address in case of Handshaking) Time (ns) Synchronous/Burst Max Burst Access Time (ns) Max OE Access Time (ns) Max Address Access Time (ns) Asynchronous Max CE Access Time (ns) Max OE Access Time (ns) MBM29BS12DH Non-Handshaking 71 11 11 50 50 11 MBM29FS12DH Handshaking 56 11 11 50 50 11 s PACKAGE 80-ball plastic FBGA (BGA-80P-M04) MBM29BS/FS12DH15 (Continued) The device provides truly high performance non-volatile memory solution. The device offers fast burst access frequency of 66 MHz with initial access times of 56 ns at Handshaking mode, allowing operation of high-speed microprocessors without wait states. To eliminate bus connection the device has separate chip enable (CE), write enable (WE), address valid (AVD) and output enable (OE) controls. For burst operations, the device additionally requires Ready (RDY) at Handshaking mode, and Clock (CLK). This implementation allows easy interface with minimal glue logic to a wide range of microprocessors/ microcontrollers for high performance read operations. The burst read mode feature gives system designers flexibility in the interface to the device. The user can preset the burst length and wrap through the same memory space. At 66 MHz, the device provides a burst access of 11 ns with a latency of 56 ns at 30 p F (Handshaking mode). The dual operation function provides simultaneous operation by dividing the memory space into four banks. The device can improve overall system performance by allowing a host system to program or...