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MBM29BS32LF25 - BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT

Download the MBM29BS32LF25 datasheet PDF. This datasheet also covers the MBM29BS32LF18 variant, as both devices belong to the same burst mode flash memory cmos 32m (2m x 16) bit family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each.

The device offered in a 60-ball FBGA package.

This device is designed to be programmed in-system with the standard system 1.8V VCC supply.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The Enhanced VI/O (VCCQ) feature allows the output voltage generated on the device to be determined based on the VI/O level. This feature allows this device to operate in the 1.8 V and 3.0 V I/O environment, driving and receiving signals to and from other 1.8 V and 3.0 V devices on the same bus. The device features sing.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29BS32LF18_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M (2M × 16) BIT MBM29BS/BT32LF 18/25 s GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply. (Continued) s PRODUCT LINE UP Part No. VCC VCCQ Clock Rate Max Latency Time (ns) Synchronous/Burst Max Burst Access Time (ns) Max OE Access Time (ns) Max Address Access Time (ns) Asynchronous Max CE Access Time (ns) Max OE Access Time (ns) MBM29BS/ BT32LF-25 1.8 V +0.15 V –0.15 V MBM29BT32LF-18 MBM29BS32LF-18 1.8 V 3.0 V +0.15 V –0.15 V +0.15 V –0.30 V 1.8 V 1.