BL075P03F Datasheet | Galaxy Microelectronics

P-Channel Enhancement Mode MOSFET BL075P03F Features - Super low gate charge - Green device available - Excellent cd V / dt effect decline - Advanced high cell density trench technology - HBM: JESD22-A114-B: 1C Mechanical Data - Case: ITO-220AB - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 ITO-220AB Ordering Information Part Number BL075P03F Package ITO-220AB Shipping Quantity 50 pcs / Tube Marking Code 075P03F Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Continuous Drain Current (TA = 25°C) Continuous Drain Current (TA = 100°C) Pulsed Drain Current (tp = 10μs, TC = 25°C) Single Pulse Avalanche Energy - 2 Power Dissipation (TC = 25°C) Power Dissipation (TA = 25°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS PD TJ TSTG Value -30 ±20 -60 -38 -13 -8.5 -180 150 42 2 -55 ~ +150 -55 ~ +150 Unit V V A A A A A m J W W °C °C Thermal Characteristics Parameter Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Air Symbol RθJC RθJA Min. -...