BL090N12THF
BL090N12THF is N-Channel Enhancement Mode MOSFET manufactured by Galaxy Microelectronics.
Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
N-Channel Enhancement Mode MOSFET BL090N12THF
Mechanical Data
- Case: ITO-220AB
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matted-Tin plated; Solderable Per MIL-STD-202,
Method 208
ITO-220AB
Ordering Information
Part Number BL090N12THF
Package ITO-220AB
Shipping Quantity 50 pcs / Tube
Marking Code 090N12THF
Maximum Ratings (@ TC = 25°C unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Pulsed Drain Current (tp = 10μs, TC = 25°C) Single Pulse Avalanche Energy
- 2 Power Dissipation (TC = 25°C) Operating Junction Temperature Range Storage Temperature Range
Symbol VDSS VGSS
IDM EAS PD TJ TSTG
Value 120 ±20 45 28 180 240 35
-55 ~ +150 -55 ~ +150
Unit V V A A A m J W °C °C
Thermal Characteristics
Parameter Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Air
Symbol RθJC RθJA
Min.
- Typ.
- Max. 3.5...
