Galaxy Century Microelectronics BL2306
N-Channel Power Mosfet
FEATURES
● Capable of 2.5V gate drive● Lower on-resistance
● Reliable and Rugged
● Electrostatic Sensitive Devices.
● MSL 1.
APPLICATIONS
● Power Management in Notebook.● Portable Equipment.
● Battery Powered System. Pb Lead-free BL2306 SOT-23 ORDERING INFORMATION Type No. Marking BL2306 2306 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS ID IDM Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current ±12 5.3 4.3 10 PD Power Dissipation 1.38 RθJA TJ, Tstg Thermal resistance,Junction-to-Ambient Operating Junction and Storage Temperature Range 90 -55~+150 Units V V A A W ℃/W ℃ C278 Rev.A 1 Production specification N-Channel Enhancement Mode Power Mosfet BL2306
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Drain-Source