BL2306 Overview
Production specification N-Channel Enhancement Mode Power Mosfet.
BL2306 Key Features
- Capable of 2.5V gate drive
- Lower on-resistance
- Reliable and Rugged
- Electrostatic Sensitive Devices
BL2306 Applications
- Power Management in Notebook
| Part number | BL2306 |
|---|---|
| Datasheet | BL2306-GME.pdf |
| File Size | 454.58 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power Mosfet |
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Production specification N-Channel Enhancement Mode Power Mosfet.
See all Galaxy Microelectronics datasheets
| Part Number | Description |
|---|---|
| BL2300 | N-Channel Power Mosfet |
| BL2301 | P-Channel Enhancement Mode Field Effect Transistor |
| BL2301W | P-Channel Enhancement MOSFET |
| BL2302 | N-Channel Enhancement Mode Field Effect Transistor |
| BL2303 | P-Channel Power Mosfet |
| BL2304 | N-Channel Power Mosfet |
| BL2305 | P-Channel Power Mosfet |
| BL2308 | N-Channel Power Mosfet |
| BL2311 | P-Channel Power Mosfet |
| BL2312 | N-Channel Power Mosfet |