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BL3435 Datasheet P-Channel Power Mosfet

Manufacturer: Galaxy Microelectronics

Overview: Production specification P-Channel Enhancement Mode Field Effect Transistor.

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Key Features

  • Electrostatic Sensitive Devices.
  • VDS (V) =- 20V.
  • ID = -3.5 A(VGS = -4.5V).
  • RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free.

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