BL3435
BL3435 is P-Channel Power Mosfet manufactured by Galaxy Microelectronics.
Production specification
P-Channel Enhancement Mode Field Effect Transistor BL3435
Features
- Electrostatic Sensitive Devices.
- VDS (V) =- 20V
- ID = -3.5 A(VGS = -4.5V)
- RDS(ON) < 70mΩ (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V)
Pb
Lead-free
APPLICATIONS
- P-channel enhancement mode effect transistor.
- Switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
-20
VGSS ID
IDM PD RθJA
Gate -Source voltage
±8
Continuous Drain...
