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BL3435 - P-Channel Power Mosfet

Features

  • Electrostatic Sensitive Devices.
  • VDS (V) =- 20V.
  • ID = -3.5 A(VGS = -4.5V).
  • RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free.

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Datasheet preview – BL3435

Datasheet Details

Part number BL3435
Manufacturer GME
File Size 599.54 KB
Description P-Channel Power Mosfet
Datasheet download datasheet BL3435 Datasheet
Additional preview pages of the BL3435 datasheet.

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Full PDF Text Transcription

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Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435 FEATURES  Electrostatic Sensitive Devices.  VDS (V) =- 20V  ID = -3.5 A(VGS = -4.5V)  RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. SOT-23 ORDERING INFORMATION Type No. Marking BL3435 3435 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -20 VGSS ID IDM PD RθJA Gate -Source voltage ±8 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulsed Drain Current a Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ Thermal resistance,Junction-to-Ambient -3.
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