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N-Channel Power MOSFET
FEATURES
VDS=100V ID = 36A @VGS = 10V RDS(ON)
< 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V .
APPLICATIONS
N-Channel Power MOSFET. Switching Applications.
Production specification
BL36N10
TO-220AB
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
Value
VDS Drain-Source Voltage
100
Unit V
VGS ID IDM PD EAS RθJA RθJC Tj Tj Tstg
Gate -Source Voltage Drain Current Continuous at TC=25℃
TC=100℃ Drain Current(pulsed) Power Dissipation at TC=25℃
TC=100℃ Avalanche Energy(Single Pulsed) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction Temperature Junction and StorageTemperature Range
±20 36 24
144 34 14 200
V A A W mJ
40 ℃/W
2.3 ℃/W
+150
℃
-55 to +150 ℃
X131 Rev.A
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BL36N10 Datasheet
