BL36N10 Datasheet | Galaxy Microelectronics

N-Channel Power MOSFET Features - VDS=100V - ID = 36A @VGS = 10V - RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V . APPLICATIONS - N-Channel Power MOSFET. - Switching Applications. Production specification TO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage Unit V VGS ID IDM PD EAS RθJA RθJC Tj Tj Tstg Gate -Source Voltage Drain Current Continuous at TC=25℃ TC=100℃ Drain Current(pulsed) Power Dissipation at TC=25℃ TC=100℃ Avalanche Energy(Single Pulsed) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction Temperature Junction and StorageTemperature Range ±20 36 24 144 34 14...